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The concern over whisker growth is related to electrical short circuits. If a tin whisker is long enough, it may break due to mechanical shock or vibration. The broken whisker may bridge two closely spaced contacts or traces on a component or PWB. Whiskers need not break to cause a short circuit, as they can grow long enough to bridge two adjacent, closely spaced conductors. In 1998, the Galaxy IV communications satellite failure was traced back to tin whiskers. Spare boards for that satellite stored on Earth clearly showed whisker growth. It is ironic that the first whisker issue occurred in 1946 on Bell telephone equipment, causing another telecommunications disruption. Theories abound with regard to tin whisker formation. There are lattice dislocation theories and grain boundary diffusion theories. But the most prevalent theory for whisker generation relates their origin to compressive stresses within the tin lattice and perhaps weak spots in the overlying natural oxide on the tin surface (see Fig. 45.7). When tin grains are compressed against each other, and particularly when there are large compressive forces against a small, near-surface grain, the small grain may start to recrystallize or extrude in the least stressful direction, outward through a weak spot in the native oxide layer. Growth will continue until the lattice energy reaches equilibrium. Tin whiskers can grow to a diameter of approximately 1 micrometer and their length can reach tens of micrometers.

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FIGURE 45.7 Compressive stress within the tin lattice may cause whisker formation. The picture sequence depicts a likely mechanism for tin whisker growth and risk to printed circuit assembly: (a) A tin lattice with small, near-surface grain between two large grains. (b) Compressive stresses cause recrystallization of grain. A thin spot in the oxide layer allows rudimentary whiskers to penetrate the surface. (c) The whisker continues to grow. (d) The whisker continues to grow. (e) The whisker breaks due to mechanical shock or vibration. Whisker fragment poses a shorting risk to the PCA.

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Now that Europe s RoHS legislation restricts Pb to a level of less than or equal to 1,000 parts per million by weight in electrical and electronic assemblies, there is much more focus on tin whiskers Traditionally, many electrical components had tin-lead surface finishes, as did printed wiring boards (HASL) In cases where pure tin finishes were used on components, small additions of lead were added The resulting lead-doped tin lattice imparted some compliance to the structure and reduced the risk of tin whisker formation For the vast majority of electrical and electronic products, that is no longer an option for many classes of components Where tin and copper are in contact with one another, copper is found to diffuse into tin faster than tin into copper The disruption to the tin lattice results in compressive strains, which sets the stage for whisker initiation.

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The solution is the addition of a thick, non-porous nickel barrier layer over the copper Tin is then plated over the nickel The thick nickel deposit is generally under tension and the tin diffuses into the nickel faster than the nickel into the tin Since the nickel exerts no compressive influence on the tin lattice, tin whiskers are less likely to form Note that an added RoHS exemption allows the addition of Pb to Sn plated component leads if the component lead pitch is <065 mm (<0025 in) Besides metallic dopants, there are other ways to mitigate the growth of tin whiskers Brighteners in tin-plating baths should be avoided and matte tin is preferred to minimize whisker growth Annealing tin coatings is known to reduce whisker growth as recrystallization minimizes lattice stress.

Precision Engineering A comparison of bearing types Power requirement [32]

Ensuring that the reflow temperature during PCA soldering is above the melting point of tin (232 C) will reduce whisker risk Additionally, the use of a barrier metal between copper and tin is recommended whether for circuit board or component surface finish..

full-duplex: Same as Duplex glitch: An unwanted, transient signal transition from the current level to the other level and back to the original level half-duplex: Term used in communication systems that means that either the transmitter can send or the receiver can receive signals at a given time handshake signal: Control and feedback signals used between two (or more) devices to facilitate exchange of data hexadecimal: A base-16 number system The numbers go from 0 to 9, A, B, C, D, E, and F host: A computer system acting as a master that provides services to other connected devices or systems IC: Acronym for Integrated Circuit A semiconductor chip with many transistors and resistors connected to make an electronic circuit ICE: Acronym for In-Circuit Emulator A development tool for developing microprocessor-based system and devices The ICE mimics the operation of the target processor during the development process.

Historically, the Tg has been the most common property used to classify FR-4 base materials, and this is one of the primary properties documented in IPC-4101. Materials with high Tg values were generally viewed as being more reliable. While this question was never as simple as specifying only the Tg, the move toward lead-free assembly has caused a fundamental redefinition of what properties are needed to ensure a given level of reliability. The reason is that the alloys used in lead-free assembly require higher peak temperatures than those used in tinlead assembly. These higher peak temperatures can approach the point where many base materials begin to decompose. For this reason, the decomposition temperature is becoming another property used to classify base materials. Other important properties include Z-axis expansion characteristics, moisture absorption, and adhesion characteristics within the material, commonly measured using time-todelamination tests such as the T260 test. The Tg and its impact on Z-axis expansion are summarized below along with the decomposition temperature. The other properties will be discussed in Chaps. 8 and 10.

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